Epitaxial ternary RexMo1-xSi2 thin films on Si(100)

Reactive deposition epitaxy was used to synthesize thin layers of RexMo1 _ _x8i2 on Si(lOO). In the case of x= 1, ReSi2 layers of excellent crystalline quality have been reported previously [J. E. Mahan, K. M. Geib, G. Y. Robinson, R. G. Long, Y. Xinghua, G. Bai, and M.-A. Nicolet, Appl. Phys. Lett. 56, 2439 ( 1990) ]. In the case of x = 0, however, virtually no alignment of the MoSi2 and the substrate is found, although this silicide is nearly isomorphic to ReSi2 • For intermediate values of x, highly epitaxial ternary silicides are obtained, at least for a Mo fraction up to 1/3.